IRFBC30.pdf

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N-CHANNEL 600V - 1.8 OHM - 3.6A - TO-220 POWERMESH MOSFET
[
IRFBC30
N - CHANNEL 600V - 1.8
- 3.6A - TO-220
PowerMESH
W
] II
MOSFET
TYPE
V DSS
R DS(on)
I D
IRFBC30
600 V
< 2.2
W
3.6 A
n
TYPICAL R DS(on) = 1.8
W
EXTREMELY HIGH dv/dt CAPABILITY
n
100% AVALANCHE TESTED
n
VERY LOW INTRINSIC CAPACITANCES
n
GATE CHARGE MINIMIZED
n
DESCRIPTION
The PowerMESH
3
2
is the evolution of the first
generation of MESH OVERLAY
] II
1
. The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
]
TO-220
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
INTERNAL SCHEMATIC DIAGRAM
SWITH MODE POWER SUPPLIES (SMPS)
n
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
n
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V DS
Drain-source Voltage (V GS =0)
600
V
V DGR
Drain- gate Voltage (R GS =20k
W
)
600
V
V GS
Gate-source Voltage
±
20
V
I D
Drain Current (continuous) at T c =25 o C
3.6
A
I D
Drain Current (continuous) at T c =100 o C
2.3
A
I DM ( • ) Drain Current (pulsed)
14
A
P tot
Total Dissipation at T c =25 o C
75
W
Derating Factor
0.6
W/ o C
dv/dt( 1 ) Peak Diode Recovery voltage slope
3
V/ns
T stg
Storage Temperature
-65 to 150
o C
T j
Max. Operating Junction Temperature
150
o C
(
•
) Pulse width limited by safe operating area
( 1 )I SD 33.6
A, di/dt
3
60 A/
m
s, V DD 3
V (BR)DSS ,Tj
3
T JMAX
January 2000
1/8
214295425.002.png
IRFBC30
THERMAL DATA
R thj-case
Rthj-amb
R thc-sink
T l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
1.7
62.5
0.5
300
o C/W
oC/W
o C/W
o C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
3.6
A
E AS
Single Pulse Avalanche Energy
(starting T j =25 o C, I D =I AR ,V DD =50V)
300
mJ
ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V (BR)DSS Drain-source
Breakdown Voltage
I D =250 m AV GS =0
600
V
I DSS
Zero G ate Voltage
Drain Current (V GS =0)
V DS =MaxRating
V DS = Max Rating
1
50
m
A
T c =125 o C
m
A
I GSS
Gate-body Leakage
Current (V DS =0)
V GS =
±
20 V
±
100
nA
ON (
*
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V GS(th) Gate Threshold
Voltage
V DS =V GS I D = 250
m
A
2
3
4
V
R DS(on) Static Drain-source On
Resistance
V GS =10V I D = 2.2 A
1.8
2.2
W
I D(o n)
On State Drain Current V DS >I D(o n) xR DS(on )ma x
V GS =10V
3.6
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g fs (
*
)
r rd
Transconductance
V DS >I D(o n) xR DS(on )ma x
I D =2.2A 2.5
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS =25V f=1MHz V GS =0
475
72
10
pF
pF
pF
2/8
214295425.003.png
IRFBC30
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t d(on)
t r
Turn-on Time
Rise Time
V GS =10V
(see test circuit, figure 3)
W
14
14
ns
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 480 V I D =3.6A V GS =10V
16.5
2.5
9
23.1
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t r(Voff)
t f
t c
Off-voltage Rise Time
Fall Time
Cross-over Time
V DD = 480 V I D =3.6A
R G =4.7
W
15
19
24
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I SD
I SDM (
•
)
Source-drain Current
Source-drain Current
(pulsed)
3.6
14
A
A
V SD (
*
) Forward On Voltage
I SD =3.6A V GS =0
1.6
V
t rr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
s
V DD = 100 V T j =150 o C
(see test circuit, figure 5)
m
600
ns
Q rr
2.8
C
I RRM
9
A
(
*
) Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
(
•
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
V DD = 250 V I D =2.5A
R G =4.7
V GS =10V
(see test circuit, figure 5)
I SD = 5 A di/dt = 100 A/
m
214295425.004.png
IRFBC30
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
214295425.005.png
IRFBC30
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
214295425.001.png

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