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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW86
HF/VHF power transistor
Product specification
File under Discrete Semiconductors, SC08a
August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
DESCRIPTION
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB and B operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions. Matched
h
FE
groups are available on request.
QUICK REFERENCE DATA
R.F. performance up to T
h
=25
°
C
MODE OF
OPERATION
V
CE
V
f
MHz
P
L
W
G
p
dB
%
z
i
W
Y
L
mS
d
3
dB
c.w. (class-B)
28
175
45
>
7,5
>
70 0,7
+
j1,3 110
-
j62
-
s.s.b. (class-AB)
28
1,6
-
28 5
-
47,5 (P.E.P.) typ. 19
typ. 45
-
-
typ.
-
30
s.s.b. (class-A)
26
1,6
-
28
17 (P.E.P.) typ. 22
-
-
-
typ.
-
42
PIN CONFIGURATION
PINNING - SOT123
PIN
DESCRIPTION
halfpage
1
collector
1
4
2
emitter
c
3
base
handbook, halfpage
4
emitter
b
MBB012
e
2
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
=0)
peak value
V
CESM
max.
65 V
Collector-emitter voltage (open base)
V
CEO
max.
36 V
Emitter-base voltage (open-collector)
V
EBO
max.
4 V
Collector current (average)
I
C(AV)
max.
4 A
Collector current (peak value); f
>
1 MHz
I
CM
max.
12 A
R.F. power dissipation (f
>
1 MHz); T
mb
=25
°
C
P
rf
max.
105 W
Storage temperature
T
stg
-
65 to
+
150
°
C
Operating junction temperature
T
j
max.
200
°
C
10
MGP630
MGP631
150
handbook, halfpage
handbook, halfpage
I
C
(A)
P
rf
(W)
100
III
derate by 0.58 W/K
II
0.43 W/K
T
h
= 70
°
C
T
mb
= 25
C
50
I
1
10
2
0
10
V
CE
(V)
0
50
T
h
(
°
C)
100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3 R.F. power dissipation; V
CE
£
28 V; f
>
1 MHz.
C)
From junction to mounting base (d.c. dissipation)
°
C, i.e. T
h
=70
°
R
th j-mb(dc)
=
2,65 K/W
From junction to mounting base (r.f. dissipation)
R
th j-mb(rf)
=
1,95 K/W
From mounting base to heatsink
R
th mb-h
=
0,3 K/W
August 1986
3
°
THERMAL RESISTANCE
(dissipation = 45 W; T
mb
= 83,5
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
CHARACTERISTICS
T
j
=25
°
C unless otherwise specified
Collector-emitter breakdown voltage
V
BE
=0;I
C
=25mA
V
(BR)CES
>
65 V
Collector-emitter breakdown voltage
open base; I
C
= 100 mA
V
(BR)CEO
>
36 V
Emitter-base breakdown voltage
open collector; I
E
=10mA
V
(BR)EBO
>
4V
Collector cut-off current
V
BE
= 0; V
CE
=36V
I
CES
<
10 mA
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
E
SBO
>
8mJ
R
BE
=10
W
E
SBR
>
8mJ
D.C. current gain
(1)
I
C
= 2,5 A; V
CE
=5V
h
FE
typ. 45
10 to 80
D.C. current gain ratio of matched devices
(1)
I
C
= 2,5 A; V
CE
=5 V
h
FE1
/h
FE2
<
1,2
Collector-emitter saturation voltage
(1)
I
C
= 7,5 A; I
B
= 1,5 A
V
CEsat
typ.
1,5 V
Transition frequency at f = 100 MHz
(1)
-
I
E
= 2,5 A; V
CB
= 28 V
f
T
typ.
570 MHz
-
I
E
= 7,5 A; V
CB
= 28 V
f
T
typ.
570 MHz
Collector capacitance at f = 1 MHz
I
E
=I
e
= 0; V
CB
=28V
C
c
typ.
82 pF
Feedback capacitance at f=1MHz
I
C
= 100 mA; V
CE
=28V
C
re
typ.
54 pF
Collector-flange capacitance
C
cf
typ.
2 pF
Note
1. Measured under pulse
conditions: t
p
£
MGP632
4
handbook, halfpage
200
m
s;
d£
0,02.
I
C
(A)
2
T
h
= 70
°
C
25
°
C
Fig.4 Typical values;
V
CE
= 28 V.
0
0.5
1
V
BE
(V)
1.5
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
MGP633
MGP634
100
300
handbook, halfpage
handbook, halfpage
C
c
(pF)
h
FE
V
CE
= 28 V
200
50
5 V
100
typ
0
0
0
5
10
15
0
20
40
I
C
(A)
V
CB
(V)
Fig.5 Typical values; T
j
=25
°
C.
Fig.6 I
E
=I
e
= 0; f = 1 MHz; T
j
=25
°
C.
MGP635
1000
handbook, full pagewidth
f
T
(MHz)
V
CB
= 28 V
500
15 V
0
0
5
10
15
-
I
E
(A)
Fig.7 Typical values; f = 100 MHz; T
j
=25
°
C.
August 1986
5
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