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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV25
VHF power transistor
Product specification
File under Discrete Semiconductors, SC08a
August 1986
214251037.054.png
Philips Semiconductors
Product specification
VHF power transistor
BLV25
DESCRIPTION
FEATURES
N-P-N silicon planar epitaxial
transistor primarily for use in
v.h.f.-f.m. broadcast transmitters.
· internally matched input for
wideband operation and high
power gain;
· multi-base structure and diffused
emitter ballasting resistors for an
optimum temperature profile;
· gold-metallization ensures
excellent reliability.
The transistor has a 1
¤ 2 in 6-lead
flange envelope with a ceramic cap.
All leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance up to T h =25 ° C in an unneutralized common-emitter class-B circuit.
MODE OPERATION
V CE
V
f
MHz
P L
W
P S
W
G p
dB
%
narrow band; c.w.
28
108
175
<
17,5
> 10,0
> 65
PIN CONFIGURATION
PINNING
PIN
DESCRIPTION
1
emitter
handbook, halfpage
2
emitter
1
2
3
base
3
4
4
collector
5
emitter
6
emitter
5
6
MSB006
Fig.1 Simplified outline, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
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Philips Semiconductors
Product specification
VHF power transistor
BLV25
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); V BE =0
V CESM
max.
65 V
open base
V CEO
max.
33 V
Emitter-base voltage (open collector)
V EBO
max.
4 V
Collector current
d.c. or average
I C ; I C(AV)
max.
17, 5 A
(peak value); f > 1 MHz
I CM
max.
35 A
Total power dissipation at T mb =25
C
P tot (d.c.)
max.
220 W
R.F. power dissipation (f
>
1 MHz); T mb =25
°
C
P tot (r.f.)
max.
270 W
R.F. power dissipation (f
>
1 MHz); T h =70
°
C
P tot (r.f.)
max.
146 W
Storage temperature
T stg
- 65 to
+ 150
° C
Operating junction temperature
T j
max.
200
°
C
10 2
MGP294
MGP295
300
handbook, halfpage
handbook, halfpage
I C
(A)
P tot
(W)
III
T mb = 25
°
C
200
(1)
II
10
T h = 70
°
C
100
I
1
10 2
0
1
10
0
50
100
V CE (V)
T h ( ° C)
(1) Second breakdown limit.
I Continuous d.c. operation
II Continuous r.f. operation (f > 1 MHz)
III Short-time operation during mismatch; (f
>
1 MHz).
Fig.2 D.C. SOAR.
Fig.3 Power derating curves vs. temperature.
THERMAL RESISTANCE
(dissipation = 150 W; T mb =72 ° C, i.e. T h =42 ° C)
From junction to mounting base (d.c. dissipation)
R th j-mb(dc)
max
0,85 K/W
From junction to mounting base (r.f. dissipation)
R th j-mb(rf)
max
0,60 K/W
From mounting base to heatsink
R th mb-h
max
0,2 K/W
August 1986
3
°
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Philips Semiconductors
Product specification
VHF power transistor
BLV25
CHARACTERISTICS
T j =25 ° C
Collector-emitter breakdown voltage
V BE =0;I C =50mA
V (BR)CES
>
65 V
open base; I C = 200 mA
V (BR)CEO
>
33 V
Emitter-base breakdown voltage
open collector; I E =20mA
V (BR)EBO
>
4V
Collector cut-off current
V BE =0;V CE = 33 V
I CES
<
25 mA
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
E SBO
>
20 mJ
R BE =10 W
E SBR
>
20 mJ
D.C. current gain (1)
I C = 8,5 A; V CE =25V
h FE
typ.
50
15 to 100
Collector-emitter saturation voltage (1)
I C = 20 A; I B = 4,0 A
V CEsat
typ.
1,6 V
Transition frequency at f
=
100 MHz (2)
-
I E = 8,5 A; V CB =25V
f T
typ.
600 MHz
- I E = 20 A; V CB =25V
f T
typ.
600 MHz
Collector capacitance at f = 1 MHz
I E =I e = 0; V CB =25V
C c
typ.
275 pF
Feedback capacitance at f=1MHz
I C = 100 mA; V CE =25V
C re
typ.
155 pF
Collector-flange capacitance
C cf
typ.
3 pF
Notes
1. Measured under pulse conditions: t p £
300
m
s;
d£
0,02.
2. Measured under pulse conditions: t p £
50
m
s;
d£
0,01.
August 1986
4
214251037.049.png 214251037.050.png
Philips Semiconductors
Product specification
VHF power transistor
BLV25
MGP296
MGP297
80
800
handbook, halfpage
handbook, halfpage
f T
(MHz)
typ
h FE
typ
40
400
0
0
0
10
20
0
10
20
30
I C (A)
- I E (A)
Fig.4 V CE = 25 V; T j =25 ° C.
Fig.5 V CB = 25 V ; f = 100 MHz; T j =25 ° C.
MGP298
600
handbook, halfpage
C c
(pF)
typ
300
0
0
10
20
30
V CB (V)
Fig.6 I E =I e = 0; f = 1 MHz; T j =25
°
C.
August 1986
5
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