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NPN 4 GHz wideband transistor
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ34
NPN 4 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
DESCRIPTION
PINNING
NPN transistor encapsulated in a 4
lead SOT122A envelope with a
ceramic cap. All leads are isolated
from the stud.
PIN
DESCRIPTION
Code: BFQ34/01
1
collector
lfpage
4
It is primarily intended for driver and
final stages in MATV system
amplifiers. It is also suitable for use in
low power band IV and V equipment.
Diffused emitter-ballasting resistors
and the application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. The device also
features high output voltage
capabilities.
2
emitter
1
3
3
base
4
emitter
2
Top view
MBK187
Fig.1 SOT122A.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP. MAX. UNIT
V
CBO
collector-base voltage
open emitter
-
25
V
V
CEO
collector-emitter voltage
open base
-
18
V
I
C
collector current
-
150
mA
P
tot
total power dissipation
up to T
c
= 160
°
C
-
2.7
W
f
T
transition frequency
I
C
= 150 mA; V
CE
= 15 V; f = 500 MHz 4
-
GHz
V
o
output voltage
I
C
= 120 mA; V
CE
= 15 V; R
L
=75
W
;
1.2
-
V
T
amb
= 25
°
C; d
im
=
-
60 dB
f
(p
+
q-r)
= 793.25 MHz
P
L1
output power at 1 dB gain
compression
I
C
= 120 mA; V
CE
= 15 V; R
L
=75
W
;
26
-
dBm
f = 800 MHz; T
amb
= 25
C
ITO
third order intercept point
I
C
= 120 mA; V
CE
= 15 V; R
L
=75
W
;
45
-
dBm
T
amb
= 25
°
C
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1995
2
°
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
V
CBO
collector-base voltage
open emitter
-
25
V
V
CEO
collector-emitter voltage
open base
-
18
V
V
EBO
emitter-base voltage
open collector
-
2
V
I
C
DC collector current
-
150
mA
P
tot
total power dissipation
up to T
c
= 160
°
C
-
2.7
W
T
stg
storage temperature
-
65 150
C
T
j
junction temperature
-
200
°
C
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-c
thermal resistance from junction to case
15 K/W
September 1995
3
°
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 15 V
-
-
100
m
A
h
FE
DC current gain
I
C
= 75 mA; V
CE
= 15 V
25
70
-
I
C
= 150 mA; V
CE
= 15 V
25
70
-
f
T
transition frequency
I
C
= 75 mA; V
CE
= 15 V; f = 500 MHz 3
3.5
-
GHz
I
C
= 150 mA; V
CE
= 15 V;
f = 500 MHz
3.5 4
-
GHz
C
c
collector capacitance
I
E
= 0; V
CB
= 15 V; f = 1 MHz
-
2
2.75 pF
C
e
emitter capacitance
I
C
= 0; V
EB
= 0.5 V; f = 1 MHz
-
11
-
pF
C
re
feedback capacitance
I
C
= 10 mA; V
CE
= 15 V; f = 1 MHz;
T
amb
=25
-
1
1.35 pF
C
C
c-s
collector-stud capacitance
note 1
-
0.8
-
pF
F
noise figure (see Fig.2)
I
C
= 120 mA; V
CE
= 15 V;
f = 500 MHz; T
amb
=25
-
8
-
dB
°
C
G
UM
maximum unilateral power gain
(note 2)
I
C
= 120 mA; V
CE
= 15 V;
f = 500 MHz; T
amb
=25
°
C
-
16.3
-
dB
V
o
output voltage
Figs 2 and 7 and note 3
-
1.2
-
V
P
L1
output power at 1 dB gain
compression (see Fig.2)
note 4
-
26
-
dBm
ITO
third order intercept point (see Fig.2) note 5
-
45
-
dBm
Notes
1. Measured with grounded emitter and base.
2. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
S
21
2
G
UM
10
=
log
--------------------------------------------------------------
dB.
æ
2
ö
æ
2
ö
è
1S
11
ø
è
1S
22
–
ø
3. d
im
=
-
60 dB (DIN 45004B, par. 6.3.: 3-tone); I
C
= 120 mA; V
CE
= 15 V; R
L
= 75
W
; T
amb
= 25
°
C;
V
p
= V
O
at d
im
=
-
60 dB; f
p
= 795.25 MHz;
V
q
= V
O
-
6 dB; f
q
= 803.25 MHz;
6 dB; f
r
= 805.25 MHz;
measured at f
(p+q
-
r)
= 793.25 MHz.
4. I
C
= 120 mA; V
CE
= 15 V; T
amb
= 25
V
r
= V
O
-
°
C; R
L
= 75
W
;
measured at f = 800 MHz.
5. I
C
= 120 mA; V
CE
= 15 V; R
L
= 75
W
;T
amb
= 25
°
C;
P
p
= ITO
-
6 dB; f
p
= 800 MHz;
6 dB; f
q
= 801 MHz;
measured at f
(2q
-
p)
= 802 MHz and at f
(2p
-
q)
= 799 MHz.
-
September 1995
4
°
–
P
q
= ITO
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
MBB361
120
handbook, halfpage
handbook, halfpage
2.2 nF
2.2 nF
h
FE
V
BB
V
CC
L2
80
200
W
L1
10 nF
output
75
10 nF
W
10 nF
input
75
W
40
DUT
0.68 pF
24
24
0
0
40
80
120
160
MEA322
I (mA)
C
f = 40 to 860 MHz; L1 = L2 = 5
m
H Ferroxcube coil.
V
CE
= 15 V; T
j
=25
°
C.
Fig.2 Intermodulation distortion MATV test circuit.
Fig.3 DC current gain as a function of collector
current.
MEA320
MBB357
6
8
handbook, halfpage
handbook, halfpage
C
c
(pF)
f
T
(GHz)
6
4
4
2
2
0
0
0
10
V (V)
CB
20
0
40
80
120
160
I (mA)
C
I
E
= 0; f = 1 MHz; T
j
=25
°
C.
V
CE
= 15 V; f = 500 MHz; T
j
=25
C.
Fig.4 Collector capacitance as a function of
collector-base voltage.
Fig.5 Transition frequency as a function of
collector current.
September 1995
5
W
W
°
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