bfp540.pdf

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Genesys
SIEGET 45 BFP 540
NPN Silicon RF Transistor
Preliminary data
3
For highest gain low noise amplifier
at 1.8 GHz
Outstanding G ms = 21 dB
Noise Figure F = 0.9 dB
4
Gold metallization for high reliability
2
SIEGET
45 - Line
1
VPS05605
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP 540
ATs
1 = B
2 = E
3 = C
4 = E
SOT-343
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V CEO
4.5
V
Collector-base voltage
V CBO
14
Emitter-base voltage
V EBO
1
Collector current
I C
80
mA
Base current
I B
4
Total power dissipation , T S = 77 °C 1)
P tot
250
mW
Junction temperature
T j
150
°C
Ambient temperature
T A
-65 ... 150
Storage temperature
T stg
-65 ... 150
Thermal Resistance
Junction - soldering point
R thJS
290
K/W
1 T S is measured on the emitter lead at the soldering point to the pcb
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SIEGET 45 BFP 540
Electrical Characteristics at T A = 25°C, unless o therwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
I C = 1 mA, I B = 0
V (BR)CEO
4.5
5
6.5 V
Collector-base cutoff current
V CB = 5 V, I E = 0
I CBO
-
-
200 nA
Emitter-base cutoff current
V EB = 1 V, I C = 0
I EBO
-
-
70
µA
DC current gain
I C = 20 mA, V CE = 3.5 V
h FE
50
110
200 -
AC Characteristics (verified by random sampling )
Collector-base capacitance
V CB = 2 V, f = 1 MHz
C cb
-
0.14 0.24 pF
Collector-emitter capacitance
V CE = 2 V, f = 1 MHz
C ce
-
0.33
-
Emitter-base capacitance
V EB = 0.5 V, f = 1 MHz
C eb
-
0.7
-
Noise figure
I C = 5 mA, V CE = 2 V, Z S = Z Sopt ,
f = 1.8 GHz
F
-
0.9
1.3 dB
Power gain, maximum stable 1)
I C = 20 mA, V CE = 2 V, Z S = Z Sopt , Z L = Z Lopt ,
f = 1.8 GHz
G ms
-
21
-
Insertion power gain
I C = 20 mA, V CE = 2 V, f = 1.8 GHz,
Z S = Z L = 50
| S 21 | 2
16
18.5
-
Third order intercept point at output
V CE = 2 V, f = 1.8 GHz, Z S = Z Sopt , Z L = Z Lopt ,
I C = 20 mA
I C = 7 mA
IP 3
dBm
-
-
24
20
-
-
1dB compression point
V CE = 2 V, f = 1.8 GHz, Z S = Z Sopt , Z L = Z Lopt ,
I C = 20 mA
I C = 7 mA
P -1dB
-
-
12
4
-
-
1 G ms = | S 21 / S 12 |
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SIEGET 45 BFP 540
Comm on Emitter S-Parameters
f
S 11
S 21
S 12
S 22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
V CE = 2 V, I C = 20 mA
0.01
0.1
0.5
1
2
3
4
5
6
0.5903
0.5827
0.4721
0.4148
0.413
0.4426
0.5064
0.5623
0.5989
-2.2
-22.1
-91.8
-137.4
178
153
133.2
119.5
109.6
42.176
40.33
26.564
15.46
7.897
5.257
3.895
3.027
2.471
179
165.1
121.2
96.5
72.9
56.5
41.6
28.1
16.2
0.0008
0.0068
0.0263
0.0397
0.0646
0.0892
0.1126
0.1313
0.1525
99.2
82.2
62.1
56.4
52.3
46.5
38.1
29.9
22.9
0.9567
0.9499
0.6533
0.3959
0.1912
0.0982
0.1022
0.1445
0.1764
-0.6
-12.1
-48.1
-68.2
-90.7
-117.9
180
147
121.8
V CE = 2 V, I C = 5 mA
0.01
0.1
0.5
1
2
3
4
5
6
0.9394
0.937
0.904
0.823
0.68
0.6308
0.6442
0.6757
0.7029
-0.7
-7.6
-37.9
-73.1
-130
-170.9
156.4
134.7
119.7
7.05
6.922
6.567
5.687
3.983
2.913
2.251
1.765
1.439
-179.5
174.7
152.3
128
92.3
67
45.6
27.5
12.7
0.001
0.0087
0.0435
0.0782
0.1073
0.1111
0.1076
0.1028
0.1065
67.1
87.3
70.9
52
25.7
12.3
4.9
3.7
7.1
0.9961
0.9976
0.9485
0.8283
0.5958
0.4471
0.3504
0.2987
0.2491
-0.4
-3.7
-18
-33.3
-52.6
-63.7
-78.9
-96.5
-114.9
Comm on Emitter Noise Parameters
f
F min 1)
G a 1)
Γ opt
R N
r n
F 50
2)
| S 21 | 2 2)
GHz
dB
dB
MAG
ANG
-
dB
dB
V CE = 2 V, I C = 5 mA
0.9
1.8
2.4
3
4
5
6
0.69
0.9
1.06
1.2
1.47
1.78
2.11
22.7
17.6
15.2
13.6
11.5
10
8.4
0.29
0.13
0.14
0.22
0.33
0.5
0.55
34
86
127
163
-153
-126
-107
8
6.5
6.5
5.5
6
9
18
0.16
0.13
0.13
0.11
0.12
0.18
0.36
0.86
0.93
1.13
1.31
1.67
2.17
2.98
21.5
17
14.1
11.9
9.5
7.9
5.6
1) Input matched for minimum noise figure, output for maximum gain 2) Z S = Z L = 50
For more and detailed S- and Noise-parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies Application Notes CD-ROM or see Internet:
http://www.infineon.com/products/discrete/index.htm
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SIEGET 45 BFP 540
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
82.84
aA
BF =
107.5
-
NF =
1
-
VAF =
28.383
V
IKF =
0.48731
A
ISE =
11.15
pA
NE =
3.19
-
BR =
5.5
-
NR =
1
-
VAR =
19.705
V
IKR =
0.02
A
ISC =
19.237
fA
NC =
1.172
-
RB =
1.3
IRB =
0.72983
mA
RBM = 5.4
RE =
0.31111
RC =
4
CJE =
1.8063
fF
VJE =
0.8051
V
MJE =
0.46576
-
TF =
6.76
ps
XTF =
0.4219
-
VTF =
0.23794
V
ITF =
1
mA
PTF = 0
deg
CJC =
234
fF
VJC =
0.81969
V
MJC =
0.30232
-
XCJC =
0.3
-
TR =
2.324
ns
CJS =
0
fF
VJS =
0.75
V
MJS =
0
-
XTB =
0
-
EG =
1.11
eV
XTI =
3
-
FC =
0.73234
-
TNOM
300
K
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
L BI =
0.47
nH
L BO =
0.53
nH
L EI =
0.23
nH
L EO =
0.05
nH
L CI =
0.56
nH
L CO =
0.58
nH
C BE =
136
fF
C CB = 6.9
fF
C CE = 134
fF
Valid up to 6GHz
The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit,
both leads are combined in one electrical connection.
For examples and ready to use parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/products/discrete/index.htm
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SIEGET 45 BFP 540
For non-linear simulation:
Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
Simulation of the package is not necessary for frequencies < 100MHz.
For higher frequencies please add the wiring of the package equivalent circuit
around the non-linear transistor.
Advantages of the common emitter configuration:
Higher gain because of lower emitter inductance.
Power is dissipated via the grounded emitter leads, because the chip is mounted
on the copper emitter leadframe.
Please note, that the broadest lead is the emitter lead.
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