2SC5128.pdf

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2SC5128_E
Power Transistors
2SC5128
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6 ± 0.2
n
Features
f 3.2 ± 0.1
9.9 ± 0.3
2.9 ± 0.2
l
High-speed switching
l
High collector to base voltage V CBO
l
Wide area of safe operation (ASO)
l
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
1.2
±
0.15
2.6
±
0.1
1.45
±
0.15
0.7 ± 0.1
n
Absolute Maximum Ratings (T C =25˚C)
Parameter
Collector to base voltage
0.75
±
0.1
Symbol
V CBO
V CES
V CEO
V EBO
I CP
I C
I B
Ratings
800
800
500
8
10
5
3
40
2
150
–55 to +150
Unit
V
V
V
V
A
A
A
2.54
±
0.2
5.08 ± 0.4
Collector to emitter voltage
7 °
1
23
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
T C =25°C
Ta=25°C
P C
W
T j
T stg
˚C
˚C
n
Electrical Characteristics (T C =25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Symbol
I CBO
I EBO
V CEO
h FE1
h FE2
V CE(sat)
V BE(sat)
f T
t on
t stg
t f
Conditions
V CB = 800V, I E = 0
V EB = 5V, I C = 0
I C = 10mA, I B = 0
V CE = 5V, I C = 0.1A
V CE = 5V, I C = 2A
I C = 2A, I B = 0.4A
I C = 2A, I B = 0.4A
V CE = 10V, I C = 0.5A, f = 1MHz
min
typ
max
100
100
Unit
m
A
m
A
V
500
15
8
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
1.0
1.5
V
V
MHz
m
20
1.0
3.0
0.3
s
m
I C = 2A, I B1 = 0.4A, I B2 = – 0.8A,
V CC = 200V
s
m
s
1
11048917.006.png 11048917.007.png 11048917.008.png 11048917.009.png 11048917.001.png
Power Transistors
2SC5128
P C —Ta
I C —V CE
V CE(sat) —I C
60
6
100
T C =25˚C
I C /I B =5
(1) T C =Ta
(2) With a 100
´
100
´
2mm
I B =800mA
30
50
Al heat sink
(3) With a 50 ´ 50 ´ 2mm
Al heat sink
(4) Without heat sink
(P C =2W)
5
700mA
600mA
10
(1)
500mA
40
4
25˚C
400mA
3
300mA
200mA
30
3
1
20
2
100mA
0.3
0.1
T C =–25˚C
(2)
50mA
10
(4)
1
0.03
(3)
100˚C
0
0
0.01
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
12
0.01
0.03
0.1
0.3
1
3
10
Ambient temperature Ta ( ˚C )
Collector to emitter voltage V CE ( V )
Collector current I C ( A )
V BE(sat) —I C
h FE —I C
f T —I C
100
1000
100
I C /I B =5
V CE =5V
V CE =10V
f=1MHz
T C =25˚C
30
300
30
10
100
10
T C =100˚C
3
30
25˚C
3
T C =–25˚C
–25˚C
25˚C
1
10
1
100˚C
0.3
3
0.3
0.1
1
0.1
0.01
0.03
0.1
0.3
1
3
10
0.01
0.03
0.1
0.3
1
3
10
0.01
0.03
0.1
0.3
1
3
10
Collector current I C (A)
Collector current I C (A)
Collector current I C (A)
C ob —V CB
t on , t stg , t f — I C
Area of safe operation (ASO)
1000
100
30
I E =0
f=1MHz
T C =25˚C
Pulsed t w =1ms
Duty cycle=1%
I C /I B =5
(2I B1 =–I B2 )
V CC =200V
T C =25˚C
30
10
I CP
I C
300
t=0.5ms
10
3
1ms
100
10ms
3
1
t stg
DC
30
1
0.3
t on
0.3
0.1
10
t f
0.1
0.03
3
0.03
0.01
Non repetitive pulse
T C =25˚C
1
0.01
0.003
1
3
10
30
100
0
1
2
3
4
5
6
7
8
1
3
10
30
100
300
1000
Collector to base voltage V CB ( V )
Collector current I C ( A )
Collector to emitter voltage V CE ( V )
2
11048917.002.png
Power Transistors
2SC5128
Area of safe operation, reverse bias ASO
Reverse bias ASO measuring circuit
8
L coil =50
µ
H
L coil
I C /I B =5
(I B1 =–I B2 )
T C ² 100˚C
7
6
I B1
T.U.T
I C
5
V in
–I B2
V CC
4
3
2
t W
V clamp
1
0
0
100
200
300
400
500
600
700
800
Collector to emitter voltage V CE ( V )
R th(t) —t
10000
1000
Note: R th was measured at Ta=25˚C and under natural convection.
(1) P T =10V ´ 0.2A (2W) and without heat sink
(2) P T =10V ´ 1.0A (10W) and with a 100 ´ 100 ´ 2mm Al heat sink
100
(1)
10
(2)
1
0.1
10 –4
10 –3
10 –2
10 –1
1
10
10 2
10 3
10 4
Time t (s)
3
11048917.003.png 11048917.004.png 11048917.005.png

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