2n6071rev3.pdf

Preferred Device

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications, such as

light dimmers, motor controls, heating controls and power supplies; or

wherever full-wave silicon gate controlled solid-state devices are

needed. Triac type thyristors switch from a blocking to a conducting

state for either polarity of applied anode voltage with positive or

negative gate triggering.

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Sensitive Gate Triggering Uniquely Compatible for Direct Coupling

to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit

Logic Functions

TRIACS

4 AMPERES RMS

200 thru 600 VOLTS

•

Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B

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Blocking Voltages to 600 Volts

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All Diffused and Glass Passivated Junctions for Greater Parameter

Uniformity and Stability

MT2

MT1

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Small, Rugged, Thermopad Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

Device Marking: Device Type, e.g., 2N6071A, Date Code

MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)

Rating

Symbol

Value

Unit

*Peak Repetitive Off-State Voltage (1)

(T J = 40 to 110 ° C, Sine Wave,

50 to 60 Hz, Gate Open)

2N6071A,B

2N6073A,B

2N6075A,B

V DRM,

V RRM

Volts

200

400

600

*On-State RMS Current (T C = 85 ° C)

Full Cycle Sine Wave 50 to 60 Hz

I T(RMS)

4.0

Amps

TO–225AA

(formerly TO–126)

CASE 077

STYLE 5

*Peak Non–repetitive Surge Current

(One Full cycle, 60 Hz, T J = +110 ° C)

I TSM

Amps

Circuit Fusing Considerations

(t = 8.3 ms)

I 2 t

3.7

A 2 s

PIN ASSIGNMENT

*Peak Gate Power

(Pulse Width 3 1.0 m s, T C = 85 ° C)

P GM

Watts

Main Terminal 1

Main Terminal 2

Gate

*Average Gate Power

(t = 8.3 ms, T C = 85 ° C)

P G(AV)

0.5

Watt

*Peak Gate Voltage

(Pulse Width 3 1.0 m s, T C = 85 ° C)

V GM

5.0

Volts

ORDERING INFORMATION

*Operating Junction Temperature Range

T J

–40 to

+110

° C

Device

Package

Shipping

*Storage Temperature Range

T stg

–40 to

+150

° C

2N6071A

TO225AA

500/Box

2N6071B

TO225AA

500/Box

Mounting Torque (6-32 Screw) (2)

—

8.0

in. lb.

2N6073A

TO225AA

500/Box

*Indicates JEDEC Registered Data.

(1) V DRM and V RRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

(2) Torque rating applies with use of a compression washer. Mounting torque in

excess of 6 in. lb. does not appreciably lower case-to-sink thermal

resistance. Main terminal 2 and heatsink contact pad are common.

2N6073B

TO225AA

500/Box

2N6075A

TO225AA

500/Box

2N6075B

TO225AA

500/Box

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2000

May, 2000 – Rev. 3

Publication Order Number:

2N6071/D

•

2N6071A/B Series

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

*Thermal Resistance, Junction to Case

q JC

3.5

° C/W

Thermal Resistance, Junction to Ambient

q JA

C/W

Maximum Lead Temperature for Soldering Purposes 1/8 , from Case for 10 Seconds

T L

260

° C

ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

*Peak Repetitive Blocking Current

(V D = Rated V DRM , V RRM; Gate Open)

T J = 25 ° C

T J = 110 ° C

I DRM,

I RRM

—

m A

ON CHARACTERISTICS

*Peak On-State Voltage (1)

(I TM = 6 A Peak)

V TM

—

Volts

*Gate Trigger Voltage (Continuous dc)

(Main Terminal Voltage = 12 Vdc, R L = 100 Ohms, T J = –40 ° C)

All Quadrants

V GT

Volts

—

1.4

2.5

Gate Non–Trigger Voltage

(Main Terminal Voltage = 12 Vdc, R L = 100 Ohms, T J = 110

V GD

Volts

All Quadrants

0.2

—

*Holding Current

(Main Terminal Voltage = 12 Vdc, Gate Open,

Initiating Current = 1 Adc)

I H

(T J = –40 ° C)

(T J = 25 ° C)

—

Turn-On Time

(I TM = 14 Adc, I GT = 100 mAdc)

t gt

—

1.5

—

m s

QUADRANT

(Maximum Value)

Type

I GT

@ T J

III

Gate Trigger Current (Continuous dc)

(Main Terminal Voltage = 12 Vdc R L = 100 ohms)

2N6071A

2N6073A

+25 ° C

(Main Terminal Voltage = 12 Vdc, R L = 100 ohms)

2N6073A

2N6075A

–40

2N6071B

2N6073B

+25 ° C

2N6073B

2N6075B

–40 ° C

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Commutation Voltage

@ V DRM , T J = 85 ° C, Gate Open, I TM = 5.7 A, Exponential Waveform,

Commutating di/dt = 2.0 A/ms

dv/dt(c)

—

V/ m s

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width

2.0 ms, Duty Cycle

2%.

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2N6071A/B Series

SAMPLE APPLICATION:

TTL-SENSITIVE GATE 4 AMPERE TRIAC

TRIGGERS IN MODES II AND III

0 V

MC7400

LOAD

2N6071A

510

–V EE

V EE = 5.0 V

115 VAC

60 Hz

Trigger devices are recommended for gating on Triacs. They provide:

1. Consistent predictable turn-on points.

2. Simplified circuitry.

3. Fast turn-on time for cooler, more efficient and reliable operation.

Voltage Current Characteristic of Triacs

(Bidirectional Device)

+ Current

Symbol

Parameter

V TM

Quadrant 1

MainTerminal 2 +

V DRM

Peak Repetitive Forward Off State Voltage

on state

I DRM

Peak Forward Blocking Current

I H

V RRM

Peak Repetitive Reverse Off State Voltage

I RRM at V RRM

I RRM

Peak Reverse Blocking Current

V TM

Maximum On State Voltage

off state

+ Voltage

I H

I DRM at V DRM

I H

Holding Current

Quadrant 3

MainTerminal 2 –

V TM

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2N6071A/B Series

Quadrant Definitions for a Triac

MT2 POSITIVE

(Positive Half Cycle)

(+) MT2

Quadrant II

(–) I GT

GATE

(+) I GT

GATE

Quadrant I

MT1

REF

I GT –

+ I GT

(–) MT2

Quadrant III

(–) I GT

GATE

(+) I GT

GATE

Quadrant IV

MT1

REF

–

MT2 NEGATIVE

(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

SENSITIVE GATE LOGIC REFERENCE

IC Logic

Firing Quadrant

Functions

III

TTL

2N6071A

Series

2N6071A

Series

HTL

2N6071A

Series

2N6071A

Series

CMOS (NAND) 2N6071B

Series

2N6071B

Series

CMOS (Buffer)

2N6071B

Series

2N6071B

Series

Operational

Amplifier

2N6071A

Series

2N6071A

Series

Zero Voltage

Switch

2N6071A

Series

2N6071A

Series

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2N6071A/B Series

110

a = 30 °

60 °

90 °

100

a = 30 °

60 °

120

120 °

180 °

180

= CONDUCTION ANGLE

a = CONDUCTION ANGLE

1.0

2.0

3.0

4.0

1.0

2.0

3.0

4.0

I T(AV) , AVERAGE ON-STATE CURRENT (AMP)

I T(RMS) , RMS ON-STATE CURRENT (AMP)

Figure 1. Average Current Derating

Figure 2. RMS Current Derating

8.0

180 °

6.0

120 °

6.0

a = 180 °

a = CONDUCTION ANGLE

90 °

= CONDUCTION ANGLE

60 °

120 °

4.0

a = 30 °

4.0

2.0

60 °

90 °

1.0

2.0

3.0

4.0

1.0

I T(RMS) , RMS ON-STATE CURRENT (AMP)

2.0

3.0

4.0

I T(AV) , AVERAGE ON-STATE CURRENT (AMP)

Figure 3. Power Dissipation

Figure 4. Power Dissipation

3.0

2.0

OFF-STATE VOLTAGE = 12 Vdc

ALL MODES

2.0

OFF-STATE VOLTAGE = 12 Vdc

ALL MODES

1.0

0.7

0.5

–60

–40

–20

100

120

140

0.3

–60 –40

–20

100

120

140

T J , JUNCTION TEMPERATURE (

Figure 5. Typical Gate–Trigger Voltage

Figure 6. Typical Gate–Trigger Current

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